The ME2N7002KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and ａnd notebook computer power management and other battery powered circuits,ａnd low in-line power loss are needed in a very small outline surface mount package.
应用：
●笔记本中的电源管理
●DC/DC转换器
●负荷开关
●液晶显示逆变器
● RDS(ON)≦3Ω@VGS=10V
● RDS(ON)≦4Ω@VGS=4.5V
● ESD Protection HBM >1KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
